VCSEL, PD, LED – Optical Chips

VI Systems leverages its industry leading optical design technology to create a portfolio of optical transmit Vertical-Cavity Surface-Emitting Laser (VCSEL) and receive Photo-Diode (PD) components for 14/25/40 Gbit/s data rates and their arrays. At your request we can design and manufacture custom chips for your application.
Place your orders to sales@v-i-systems.de
Images on this page are product samples. The actual products may vary in appearance and size.

DOWNLOAD PRODUCT CATALOG 2017

VIS offers technology transfer of 25G high-speed 850nm VCSEL technology that has successfully passed reliability qualification as well as other technologies. Read about it on our Technology Transfer page. 

850nm VCSELs - Vertical Cavity Surface Emitting Lasers

V25-850xxH
V25-850CxxH
850nm Qualified High-Speed VCSEL Chip (28 Gbit/s)
Quantities: Single chips, 4-arrays, 12-arrays


Parameter Typical
Emission Wavelength 850 nm
Data rate 28 Gbit/s (NRZ)
Peak Output Power 4 mW

Suitable for 25G Ethernet

Order complete wafer production – VIS can produce custom VCSEL chips for your application.

V25-850xxH
V50-850CxxH
850nm Ultra-High Speed VCSEL Chip (up to 56 Gbit/s)
Quantities: Single chips, 4-arrays, 12-arrays

Parameter Typical
Emission Wavelength 850 nm
Data rate 50 Gbit/s (NRZ, 4-PAM)
Peak Output Power 4 mW

850nm Photodetector PIN Diode

PD Photo-diodeD20-850C
High Speed Photodetector (up to 28 Gbit/s)

Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Operationg Wavelength 700-890 nm
3 dB Bandwitdh ~ 20 GHz
Rise Time (20% to 80%) 9 ps

PD Photo-diodeD30-850C
High Speed Photodetector (up to 40 Gbit/s)

Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Operationg Wavelength 700-890 nm
3 dB Bandwitdh ~ 30 GHz
Rise Time (20% to 80%) 6 ps

Light Emitting Diodes

Light Emitting DiodeAmber LED
610 nm

Parameter Typical
Emission Wavelength 610 nm

Light Emitting DiodeYellow LED
580 nm

Parameter Typical
Emission Wavelength 580 nm