VCSEL, PD, LED – Optical Chips

VI Systems leverages its industry leading optical design technology to create a portfolio of optical transmit Vertical-Cavity Surface-Emitting Laser (VCSEL) and receive Photo-Diode (PD) components for 28/56 and 112 Gbps data rates and their arrays. At your request we can design and manufacture custom chips for your application.
Place your orders to sales@v-i-systems.de
Images on this page are product samples. The actual products may vary in appearance and size.

DOWNLOAD PRODUCT CATALOG 2021

VIS offers technology transfer of high-speed 850nm - 940 nm VCSEL technology that has successfully passed reliability qualification as well as other technologies. Read about it on our Technology Transfer page.

850nm VCSELs - Vertical Cavity Surface Emitting Lasers

V25-850C
Qualified High-Speed VCSEL Chip
(up to 28 Gbit/s NRZ and 56 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter	Typical
Emission Wavelength	850 nm
Data rate	28 Gbit/s (NRZ)
Peak Output Power	4 mW

V50-850C
850nm Ultra-High Speed VCSEL Chip
(up to 56 Gbit/s NRZ and 112 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter	Typical
Operationg Wavelength	850 nm
Data rate	56 Gbit/s (NRZ)
Peak Output Power	4 mW

V25C-850C-HT
High-Speed VCSEL Chip for High Temperature applications
(up to 28 Gbit/s NRZ and 56 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays

Datasheet

Parameter	Typical
Emission Wavelength	850 nm
Data rate	56 Gbit/s (PAM-4)
Operating Temperature	up to 125°C

V100-xxx-C1 850 to 940 nm High Speed VCSEL Chip
(up to 112 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays

Datasheet

Parameter	Typical
Avaiable Emission Wavelength	850 / 880 / 910 / 940 nm
Data rate	112 Gbit/s (PAM-4)
Peak Output Power	4 mW

Broad Range Photodetector PIN Diode

Dxx-BROAD-Cxx
High Speed Photodetector
(up to 40 GHz)
Quantities: Single chips and 4-ch arrays

Datasheet

Parameter	Typical
Operation Wavelength	800 - 1650 nm
3 dB Bandwitdh	~ 40 GHz
Available diameter (Dap)	20 - 25 um