VCSEL, PD, LED – Optical Chips

VI Systems leverages its industry leading optical design technology to create a portfolio of optical transmit Vertical-Cavity Surface-Emitting Laser (VCSEL) and receive Photo-Diode (PD) components for 14/28/56 Gbit/s data rates and their arrays. At your request we can design  and manufacture custom chips for your application.
Place your orders to sales@v-i-systems.de
Images on this page are product samples. The actual products may vary in appearance and size.

DOWNLOAD PRODUCT CATALOG 2020

VIS offers technology transfer of 25G high-speed 850nm VCSEL technology that has successfully passed reliability qualification as well as other technologies. Read about it on our Technology Transfer page. 

850nm VCSELs - Vertical Cavity Surface Emitting Lasers

V25-850C 850nm
Q
ualified High-Speed VCSEL Chip
(up to 28 Gbit/s NRZ and 56 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Emission Wavelength 850 nm
Data rate 28 Gbit/s (NRZ)
Peak Output Power 4 mW

V50-850C
850nm Ultra-High Speed VCSEL Chip
(up to 56 Gbit/s NRZ and 112 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Operationg Wavelength 850 nm
Data rate 56 Gbit/s (NRZ)
Peak Output Power 4 mW

V25C-850C-HT 850nm
High-Speed VCSEL Chip for High Temperature applications
(up to 28 Gbit/s NRZ and 56 Gbit/s PAM-4)
Quantities: Single chips, 4-arrays

Datasheet

Parameter Typical
Emission Wavelength 850 nm
Data rate 26.5 Gbd (PAM-4)
Operating Temperature up to 125°C

850nm Photodetector PIN Diode

D20-850C
High Speed Photodetector
(up to 28 Gbaud NRZ and PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Operationg Wavelength 700-890 nm
3 dB Bandwitdh ~ 20 GHz
Rise Time (20% to 80%) 9 ps

D30-850C
High Speed Photodetector
(up to 56 Gbaud/s NRZ and PAM-4)
Quantities: Single chips, 4-arrays, 12-arrays

Datasheet

Parameter Typical
Operationg Wavelength 700-890 nm
3 dB Bandwitdh ~ 30 GHz
Rise Time (20% to 80%) 6 ps